advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 25m surface mount package i d 7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 continuous drain current 3 , v gs @ 10v 5.5 pulsed drain current 1,2 20 gate-source voltage continuous drain current 3 , v gs @ 10v 7 parameter rating drain-source voltage 40 200407031 AP9962M the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 20 s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m v gs =4.5v, i d =5a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 11 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =7a - 25.8 - nc q gs gate-source charge v ds =32v - 4.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9.1 - nc t d(on) turn-on delay time 2 v ds =20v - 10.6 - ns t r rise time i d =1a - 6.8 - ns t d(off) turn-off delay time r g =5.7 , v gs =10v - 26.3 - ns t f fall time r d =20 -12- ns c iss input capacitance v gs =0v - 1165 - pf c oss output capacitance v ds =25v - 205 - pf c rss reverse transfer capacitance f=1.0mhz - 142 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time is=1.7a, v gs=0 v , - 21.2 - ns qrr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. AP9962M 20v 100
AP9962M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 15 20 25 30 35 34567891011 v gs (v) r ds(on) (m ) i d =7a t c =25 o c 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 8.0v v g =3.0v 5.0v 10v 4.0v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a vg=10v 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 5.0v 4.0v v g =3.0v 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 0 50 100 150 junction temperature ( o c ) v gs (th) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time circuit fig 12. gate charge circuit AP9962M 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 1s 1ms 10ms 100ms dc 10 100 1000 10000 1 5 9 13 17 21 25 29 vds (v) c (pf) f=1.0mhz ciss crss coss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =25v v ds =32v i d =7a 0.8x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma 0.5x rated v ds to the oscilloscope - + 10v d g s v ds v gs r g r d 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 /w t t 0.02
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